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Bi-Hsuan Lin, Huang-Yeh Chen, Shao-Chin Tseng, Jian-Xing Wu, Bo-Yi Chen, Chien-Yu Lee, Gung-Chian Yin, Shih-Hung Chang, Mau-Tsu Tang, and Wen-Feng Hsieh, “Probing the exciton-phonon coupling strengths of O-polar and Zn-polar ZnO wafer using hard X-ray excited optical luminescence”, Appl. Phys. Lett. 109, 192104 (2016), 5-Year IF= 3.293.
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B. H. Lin, W.-R. Liu, C. Y. Lin, S. T. Hsu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, F. S.-S. Chien and C. S. Chang, “Single domain m-plane ZnO grown on m-plane sapphire by radio-frequency magnetron sputtering”, ACS Appl. Mater. Interfaces 4, 5333 (2012). (2011 IF:4.525)
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B. H. Lin, W. R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, “ The Growth of an Epitaxial ZnO Film on Si(111) with a Gd2O3(Ga2O3) Buffer Layer”, Cryst. Growth Des. 11, 2846 (2011). (2011 IF:4.720)
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Wei-Rein Liu, Bi-Hsuan Lin, Chi-Yuan Lin, Song Yang, Chin-Chia Kuo, Forest Shih-Sen Chien, Chen-Shiung Chang, Chia-Hung Hsu and Wen-Feng Hsieh, “The effect of thermal annealing on the optical and electrical properties of ZnO epitaxial films grown on n-GaAs (001)”, RSC Adv. 5, 12358 (2015) (2014 IF: 3.84)
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Hung-Chi Wu, Bi-Hsuan Lin, Huang-Chin Chen, Po-Chin Chen, Hwo-Shuenn Sheu, I-Nan Lin, Hsin-Tien Chiu, and Chi-Young Lee, “ One-Step Ge/Si Epitaxial Growth”, Appl. Mater. Interfaces 3, 2398 (2011). (2011 IF:4.525)
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W.-R. Liu, B. H. Lin, S. Yang, C. C. Kuo, Y.-H. Li, C.-H. Hsu, W. F. Hsieh, W. C. Lee, M. Hong and J. Kwo, “The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a -Al2O3 buffer layer”, CrystEngComm 14, 1665 (2012). (2011 IF:3.842)
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C. C. Kuo, B. H. Lin, Song Yang, W. R. Liu, W. F. Hsieh, and C.-H. Hsu, “Surface-bound-exciton emission associated with domain interfaces in m-plane ZnO
films ”, Appl. Phys. Lett. 101, 011901 (2012). (2011 IF: 3.820)
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W.-R. Liu, B. H. Lin, C. C. Kuo, W. C. Lee, M. Hong, J. Kwo, C.-H. Hsu, and W. F. Hsieh, “Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111)”, CrystEngComm 14, 8103 (2012). (2011 IF:3.842)
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C. C. Kuo, W.-R. Liu, B. H. Lin, W. F. Hsieh, C.-H. Hsu, W. C. Lee, M. Hong,and J. Kwo, “Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y2O3-buffered Si (111)” Opt Express 21, 1857 (2013). (2011 IF: 3.587)
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S. Yang, B. H. Lin, C. C. Kuo, H. C. Hsu, W.-R. Liu, M. O. Eriksson, P.-O. Holtz,C.-S. Chang, C.-H. Hsu, and W. F. Hsieh, “Improvement of crystalline and photoluminescence of atomic layer deposited m-plane ZnO epitaxial films by annealing treatment”, Cryst. Growth Des. 12, 4745 (2012). (2011 IF:4.720)
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S. Yang, C. C. Kuo, W.-R. Liu, B. H. Lin, H.-C. Hsu, C.-H. Hsu, and W. F. Hsieh, “Photoluminescence associated with basal stacking faults in c-plane ZnO epitaxial film grown by atomic layer deposition” , Appl. Phys. Lett. 100, 101907 (2012). (2011 IF: 3.820)
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S. Yang, B. H. Lin, W.-R. Liu, J.-H. Lin, C.-S. Chang, C.-H. Hsu, and W.F. Hsieh, “Structural characteristics and annealing effect of ZnO epitaxial films grown by atomic layer deposition”, Cryst. Growth Des. 9, 5184 (2009). (2008 IF:4.215)
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C.-H. Lee, Y.-Y. Shen, C. W. Liu, S. W. Lee, B.-H. Lin, and C.-H. Hsu, “SiGe Quantum Rings by Ultra-high Vacuum Chemical Vapor Deposition”, Appl. Phys. Lett. 94, 141909 (2009). (2008 IF:3.726)
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Z. K. Yang, W. C. Lee, Y. J. Lee, P. Chang, M. L. Huang, M. Hong, K. L. Yu, M.-T. Tang, B.-H. Lin, C.-H. Hsu, and J. Kwo, “Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)”, Appl. Phys. Lett. 91, 202909 (2007). (2008 IF:3.726)
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Kuang-Po Hsueh, Yue-Ming Hsin, Jinn-Kong Sheu, Wei-Chih Lai, Chun-Ju Tun, Chia-Hung Hsu, and Bi-Hsuan Lin, “Effects of leakage current and Schottky-like ohmic contact on the characterization of Al0.17Ga0.83N/GaN HBTs”, Solid-State Electronics 51 1073 (2007). (2008 IF=1.422)
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