中心簡介 / 同仁通訊錄

X光影像小組


姓名: 林碧軒( Bi-Hsuan Lin )
分機: 7314
電子郵件: bihsuan@nsrrc.org.tw
學歷:
  • 國立交通大學 光電工程所博士(2013)
  • 國立交通大學 電子物理所 碩士(2005)
  • 國立中正大學 物理系學士(2003)
經歷:
  • 國家同步輻射研究中心研究助理(2006~2014)
  • 法國ESRF博士後研究 (2013-2014)
  • 國家同步輻射研究中心助研究員 (2015~迄今)
負責實驗站:
  • TPS-23A X-ray nanoprobe
研究領域:
  • X光散射技術研究磊晶薄膜之成長機制與晶體結構
  • X光激發光致螢光(XEOL)
  • 雷射濺鍍法(PLD)成長磊晶薄膜
  • 磁控濺鍍法(RF- magnetron sputtering)成長磊晶薄膜
  • 穿透式電子顯微鏡(TEM)與聚焦離子束(FIB)系統製備TEM試片
  • 光致螢光(PL)系統研究光電半導體之光學特性
代表作:
  • Bi-Hsuan Lin, Huang-Yeh Chen, Shao-Chin Tseng, Jian-Xing Wu, Bo-Yi Chen, Chien-Yu Lee, Gung-Chian Yin, Shih-Hung Chang, Mau-Tsu Tang, and Wen-Feng Hsieh, “Probing the exciton-phonon coupling strengths of O-polar and Zn-polar ZnO wafer using hard X-ray excited optical luminescence”, Appl. Phys. Lett. 109, 192104 (2016), 5-Year IF= 3.293.
  • B. H. Lin, W.-R. Liu, C. Y. Lin, S. T. Hsu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, F. S.-S. Chien and C. S. Chang, “Single domain m-plane ZnO grown on m-plane sapphire by radio-frequency magnetron sputtering”, ACS Appl. Mater. Interfaces 4, 5333 (2012). (2011 IF:4.525)
  • B. H. Lin, W. R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, “The Growth of an Epitaxial ZnO Film on Si(111) with a Gd2O3(Ga2O3) Buffer Layer”, Cryst. Growth Des. 11, 2846 (2011). (2011 IF:4.720)
  • Wei-Rein Liu, Bi-Hsuan Lin, Chi-Yuan Lin, Song Yang, Chin-Chia Kuo, Forest Shih-Sen Chien, Chen-Shiung Chang, Chia-Hung Hsu and Wen-Feng Hsieh, “The effect of thermal annealing on the optical and electrical properties of ZnO epitaxial films grown on n-GaAs (001)”, RSC Adv. 5, 12358 (2015) (2014 IF: 3.84)
  • Hung-Chi Wu, Bi-Hsuan Lin, Huang-Chin Chen, Po-Chin Chen, Hwo-Shuenn Sheu, I-Nan Lin, Hsin-Tien Chiu, and Chi-Young Lee, “One-Step Ge/Si Epitaxial Growth”, Appl. Mater. Interfaces 3, 2398 (2011). (2011 IF:4.525)
  • C. C. Kuo, B. H. Lin, Song Yang, W. R. Liu, W. F. Hsieh, and C.-H. Hsu, “Surface-bound-exciton emission associated with domain interfaces in m-plane ZnO
    films ”, Appl. Phys. Lett. 101, 011901 (2012). (2011 IF: 3.820)
  • W.-R. Liu, B. H. Lin, C. C. Kuo, W. C. Lee, M. Hong, J. Kwo, C.-H. Hsu, and W. F. Hsieh,  “Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111)”, CrystEngComm 14, 8103 (2012). (2011 IF:3.842)
  • C. C. Kuo, W.-R. Liu, B. H. Lin, W. F. Hsieh, C.-H. Hsu, W. C. Lee, M. Hong,and J. Kwo, “Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y2O3-buffered Si (111)” Opt Express 21, 1857 (2013). (2011 IF: 3.587)
  • S. Yang, B. H. Lin, C. C. Kuo, H. C. Hsu, W.-R. Liu, M. O. Eriksson, P.-O. Holtz,C.-S. Chang, C.-H. Hsu, and W. F. Hsieh, “Improvement of crystalline and  photoluminescence of atomic layer deposited m-plane ZnO epitaxial films by  annealing treatment”, Cryst. Growth Des. 12, 4745 (2012). (2011 IF:4.720)
  • S. Yang, C. C. Kuo, W.-R. Liu, B. H. Lin, H.-C. Hsu, C.-H. Hsu, and W. F. Hsieh, “Photoluminescence associated with basal stacking faults in c-plane ZnO epitaxial  film grown by atomic layer deposition” , Appl. Phys. Lett. 100, 101907 (2012). (2011 IF: 3.820)
  • S. Yang, B. H. Lin, W.-R. Liu, J.-H. Lin, C.-S. Chang, C.-H. Hsu, and W.F. Hsieh, “Structural characteristics and annealing effect of ZnO epitaxial films grown by atomic layer deposition”, Cryst. Growth Des. 9, 5184 (2009). (2008 IF:4.215)
  • C.-H. Lee, Y.-Y. Shen, C. W. Liu, S. W. Lee, B.-H. Lin, and C.-H. Hsu, “SiGe Quantum Rings by Ultra-high Vacuum Chemical Vapor Deposition”, Appl. Phys. Lett. 94, 141909 (2009). (2008 IF:3.726)
  • Z. K. Yang, W. C. Lee, Y. J. Lee, P. Chang, M. L. Huang, M. Hong, K. L. Yu, M.-T. Tang, B.-H. Lin, C.-H. Hsu, and J. Kwo, “Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)”Appl. Phys. Lett. 91, 202909 (2007). (2008 IF:3.726)
  • Kuang-Po Hsueh, Yue-Ming Hsin, Jinn-Kong Sheu, Wei-Chih Lai, Chun-Ju Tun, Chia-Hung Hsu, and Bi-Hsuan Lin, “Effects of leakage current and Schottky-like ohmic contact on the characterization of Al0.17Ga0.83N/GaN HBTs”, Solid-State Electronics 51 1073 (2007). (2008 IF=1.422)