About NSRRC / Staff Directory

Nano Science Group

Name: 皮敦文( Tun-Wen Pi )
EXT.: 7309
E-mail: pi@nsrrc.org.tw
  • B. S. Department of Physics, Tunghai University, Taichung, Taiwan
  • Ph. D. Department of Physics, Iowa State University, Ames, Iowa
  • Temporary Instructor, Dept. of Physics, Iowa State U., Ames, Iowa
  • Associate Research Scientist, NSRRC, Hsinchu, Taiwan
  • High-resolution photoemission chamber
Research Interests:
  • ALD and MBE high k oxides on (In)GaAs and Ge.
Selected Publications:
  • T. W. Pi, T. D. Lin, W. H. Chang, Y. C. Chang, J. Kwo, and M. Hong, Semiconductor-insulator interfaces, Encyclopedia EEE (in press, 2014).
  • T. W. Pi, T. D. Lin, H. Y. Lin, Y. C. Chang, G. K. Wertheim, J. Kwo, and M. Hong, Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0.53Ga0.47As(001)-4x2 from atomic layer deposition, Appl. Phys. Lett. 104, 042904 (2014). DOI: 10.1063/1.4863440
  • Meng-Kai Lin, Yasuo Nakayama, Chin-Hung Chen, Chin-Yung Wang, H.-T. Jeng, Tun-Wen Pi, Hisao Ishii, and S.-J. Tang, Tuning gap states at organic-metal interfaces via quantum size effects, Nature Communications, 4, 2925 (2013). DOI: 10.1038/ncomms3925
  • Rei-Lin Chu, Wei-Jen Hsueh, Tsung-Hung Chiang, Wei-Chin Lee, Hsiao-Yu Lin, Tsung-Da Lin, Gail J. Brown, Jen-Inn Chyi, Tun-Wen Pi*, J. Raynien Kwo*, and Minghwei Hong*, Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y2O3 and Atomic Layer Deposition of Al2O3 - A Comparative Study, Appl. Phys. Express, 6, 121201 (2013). DOI: 10.7567/APEX.6.121201
  • Ming-Hwei Hong, Ray-Nien Kwo, Tun-Wen Pi, Mao-Lin Hwang, Yu-Hsing Chang, Pen Chang, Chun-Ann Lin, and Tsung-Da Lin, Method and system for manufacturing semiconductor device, US Patent No. US2013/0267077 A1. Publication Date: Oct. 10, 2013
  • T. W. Pi*, H. Y. Lin, T. H. Chiang, Y. T. Liu, Y. C. Chang, T. D. Lin, G. K. Wertheim*, J. Kwo*, and M. Hong*, Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition, Appl. Surf. Sci. 284, 601-610 (2013). DOI: j.apsusc.2013.07.140
  • T. W. Pi*, H. Y. Lin, T. H. Chiang, Y. T. Liu, G. K. Wertheim, J. Kwo*, and M. Hong*, Interfacial electronic structure of trimethyl-aluminum and water on an In0.20Ga0.80As(001)-4x2 surface: A high-resolution core-level photoemission study, J. Appl. Phys. 113, 203703 (2013). DOI: 10.1063/1.4807400
  • Tun-Wen Pi*, Hsiao-Yu Lin, Ya-Ting, Liu, Tsung-Da Lin, Gunther K. Wertheim*, Jueinai Kwo*, and Minghwei Hong*, Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs(001)-4x6 and As-rich GaAs(001)-2x4 surfaces: A synchrotron-radiation photoemission study, NanoResearch Letters, 8, 169 (2013). DOI: 10.1186/1556-276X-8-169
  • C.-P. Cheng*, T.L. Li*, C.-H. Kuo, and T.-W. Pi, Electronic structures of prinstine and potassium-doped rebrene thin films, Organic Electronics, 14, 942-950 (2013). DOI: 10.1016/j.orgel.2013.01.013
  • M. L. Huang, Y. H. Chang, P. Chang, J. Y. Shen, B. R. Chen, G. K. Wertheim, T. W. Pi*, M. Hong*, and J. Kwo*, Growth mechanism of atomic layer deposited Al2O3 on GaAs(001)-4×6 surface with trimethylaluminum and water as precursors, Appl. Phys. Lett. 101, 212101(2012). DOI: 10.1063/1.4767129
  • Y. H. Chang, C. A. Lin, Y. T. Liu, T. H. Chiang, H. Y. Lin, M. L. Huang, T. D. Lin, T. W. Pi, J. Kwo*, and M. Hong*, Effective Passivation of In0.2Ga0.8As by HfO2 Surpassing Al2O3 via in-situ Atomic Layer Deposition, Appl. Phys. Lett. 101, 172104 (2012). DOI: 10.1063/1.4762833
  • Chiu-Ping Cheng, Yi-Wei Chan, Chih-Feng Hsueh, and Tun-Wen Pi, Interfacial electronic properties of the heterojunctions C60/rubrene/Au and rebrene/C60/Au, J. Appl. Phys. 112, 023711 (2012). DOI: 10.1063/1.4739720
  • Meng-Kai Lin, Yasuo Nakayama, Chin-Yung Wang, Jer-Chia Hsu, Chih-Hao Pan, Shin-ichi Machida, Tun-Wen Pi, Hisao Ishii, and S.-J. Tang*, Interfacial properties at the organic/metal interface probed using quantum-well states, Phys. Rev. B 86, 155453 (2012). DOI: 10.1103/PhysRevB.86.155453
  • T.-W. Pi*, B. R. Chen, M. L. Huang, T. H. Chiang, G. K. Wertheim, M. Hong, and J. Kwo, Surface-atom core-level shift in GaAs(111)A-2x2, J. Phys. Soc. Jpn. 81, 064603 (2012). DOI: 10.1143/JPSJ.81.064603
  • Chiu-Ping Cheng, Wen-Yen Chen, Ching-Hsuan Wei, and Tun-Wen Pi, Effect of K doping on CuPc:C60 heterojunctions, J. Appl. Phys. 110, 113714 (2011). DOI: 10.1063/1.3665711
  • Yu-Hung Chen, Yu-Jen Cheng, Guan-Ru Lee, Chih-I Wu, Tun-Wen Pi, Improvements of electron injection efficiency using subphthalocyanine mixed with lithium fluoride in cathode structures of organic light emitting diodes, Organic Electronics 12, 562-565 (2011). DOI: 10.1016/j.orgel.2011.01.006
  • Y. H. Chang, M. L. Huang, P. Chang, J.Y. Shen, B. R. Chen, C. L. Hsu, T. W. Pi*, M. Hong*, J. Kwo*, In situ atomic layer deposition and synchrotron radiation photoemission study of Al2O3 on prinstine n-GaAs(001)-4x6 surface, Microelectronic Engineering 88, 1101-1104 (2011). DOI: 10.1016/j.mee.2011.03.064
  • T.-W. Pi, M. L. Huang, W.C. Lee, L. K. Chu, T. D. Lin, T. H. Chiang, Y. C. Wang, M. Hong, and J. Kwo, High-resolution core-level photoemission study of CF4-treated Ga2O3(Gd2O3) gate dielectric on Ge probed by synchrotron radiation, Appl. Phys. Lett. 98, 062903 (2011). DOI: 10.1063/1.3551726
  • T. -W. Pi, C. -P. Cheng, and G.K. Wertheim, The reaction of Si(001) with magnesium and calcium, J. Appl. Phys. 109, 043701 (2011). DOI: 10.1063/1.3553442
  • T.-W. Pi, W. C. Lee, M. L. Huang, L. K. Chu, T. D. Lin, T. H. Chiang, Y. C. Wang, M. Hong, and J. Kwo, Electronic structures of Ga2O3(Gd2O3) gate dielectric on n-Ge(001) as grown and in CF4 plasma treatment: A synchrotron-radiation photoemission study, J. Appl. Phys. 109, 063725 (2011). DOI: 10.1063/1.3553442
  • Y. H. Chang, M. L. Huang, P. Chang, C. A. Lin, Y. J. Chu, B. R. Chen, C. L. Hsu, J. Kwo*, T.-W. Pi, M. Hong*, Electrical properties and interfacial chemical environments of in-situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs, Microelectronic Engineering 88, 440-443 (2011). DOI: 10.1016/j.mee.2010.09.015