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                (a)                                          (b)                                                                                                                                                                          Energy Science











     ACTIVITY REPORT  2016







               (c)                                           (d)



















          Fig. 1:  (a) GIWAXS in-plane profiles extracted from the corresponding 2D patterns of active layers of PTB7:PC71BM prepared with
               varied routes as indicated. The characteristic PTB7 (100) and PC71BM ordering signals are marked with arrows. (b) 2D GISAXS
               patterns of active layers processed without additive and that subjected to a dipping treatment. The much richer scattering fea-
               tures marked with squares (with prominent scattering strips highlighted with an arrow in the inset; left) correspond to in-plane
               phase-separated and ordered domains of a film processed without additive; these scattering features are largely eliminated
               after the dipping treatment (GISAXS pattern at the right side). (c) Corresponding in-plane GISAXS profiles extracted at qz =
               0.03 Å  fitted (solid curves) respectively with models described in the text. The dotted thick blue and thin green curves de-
                    -1
               scribe scattering contributions from large and small PC71BM aggregates, respectively. An additional profile is extracted at qz =
               0.038 Å  and fitted for the in-plane ordering signal at qz = 0.002 Å , also marked in panel (b). (d) Model-fitted GISAXS profiles
                                                                -1
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               extracted at qz = 0.030 Å-1 for PTB7:PC71BM active layers processed with varied routes indicated. [Reproduced from Ref. 1]


          Figure 1(d) shows fitted GISAXS profiles for active   was best fitted using finer primary PC 71BM aggre-
          layers processed with SH-na additive and that fol-   gates of diameter 5.4 nm that further formed frac-
          lowed with a dipping treatment to obtain primary     tal-like clusters with D f = 2.0 and ξ y = 42 nm. Overall,
          and small PC 71BM aggregates. These sizes are smaller   the GISAXS/GIWAXS results indicate that DIO dis-
          than previous cases processed without additive or    persed PC 71BM better than SH-na. Nevertheless, the
          with solely a dipping treatment. To account for the   dual-functional SH-na is superior as it facilitated not
          steeply increased intensity in the low-q region, the   only PC 71BM dispersion and percolation on multi-
          large PC 71BM aggregates were further modeled to     length scales but also PTB7 crystallization.
          be interconnected to form fractal-like clusters with
          fitted fractal dimension D f = 2.8 or 2.5 and in-plane   In summary, new additive SH-na that can serve to
          correlation length ξ y = 140 or 100 nm for the active   control integrated bulk and surface morphology, via
          layer with SH-na additive or that further subject to   conventional spin casting followed by a novel dip-
          a dipping treatment. After the dipping treatment,    ping in a SH-na solution is reported. The improved
          the large PC 71BM aggregates partially dissolved into   PCE was correlated to the morphology optimization
          smaller aggregates, which would increase the inter-  according to measurements of GIWAXS and GISAXS.
          faces of PTB7/PC 71BM in the active layer for promoted   The results indicate that the halogen-free additive
          J sc values of the PSC. In contrast, the GISAXS profile   SH-na can form hydrogen bonds with both PTB7
          for the active layer processed with the DIO additive   and PC 71BM, resulting in substantially improved
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