NSRRC Activity Report 2022

Physics and Materials Science 011 next-generation spintronics. The findings of this work show an efficient route to read and write the bistable AFM state, shedding light on the path toward practical AFM-based spintronics. (Reported by Chang-Yang Kuo, National Yang Ming Chiao Tung University) This report features the work of Chang-Yang Kuo, Jan-Chi Yang and their collaborators published in Adv. Mater. 34 , 2200610 (2022). TPS 45A Submicron Soft X-ray Spectroscopy TLS 11A1 (Dragon) MCD, MLD, XAS. • Soft X-ray Absorption • Materials Science, Condensed-matter Physics Reference 1. C.-Y. Kuo, Y.-D. Liou, Z. Hu, S.-C. Liao, H.-M. Tsai, H.-W. Fu, C.-Y. Hua, Y.-C. Chen, H.-J. Lin, A. Tanaka, C.-T. Chen, J.-C. Yang, C.-F. Chang, Adv. Mater. 34 , 2200610 (2022). Weaving Single-Crystal Thin Films Weave epitaxy: a breakthrough approach to fabrication of twisted lateral homostructures depicts an entirely different conceptual scene for epitaxial growth. H eteroepitaxy has attracted great interest as it is a key element in modern technologies for delivering high-quality thin films, and it has also been a promising approach to the integration of different materials. Over the past decades, epitaxial growth has enabled the efficient interface and strain engineering of functional materials, which has played a focal role in reinvigorating modern science across a wide spectrum of technically important applications. In terms of epitaxial growth, the selection of single crystal substrates determines the foundation template for the deposited materials. Namely, the lattice constraints and crystalline orientations of deposited materials are subject to the selected template beneath and, thus, the allowed epitaxial degrees of freedom are determined once a specific substrate is chosen. To portray a concrete scenario for epitaxial growth, Jan-Chi Yang (National Cheng Kung University) and his group proposed a new approach, weave epitaxy, to achieve growth of twisted oxide lateral homostructures with multiple conjunction degrees of freedom. (a) (b) Fig. 1 : Twisted oxide lateral homostructures. (a) Schematic illustration of the fabrication of lateral oxide homostructures. (b) Topography images of (110)-oriented BFO grown on FS-STO, the border, and pristine STO regions (from left to right). [Reproduced from Ref. 1]