About NSRRC / Staff Directory

Materials Science Group


Name: 徐嘉鴻( Chia-Hung Hsu )
EXT.: 7118
E-mail: chsu@nsrrc.org.tw
Education:
  • 1982 B.S. in Physics, National Taiwan Normal University
  • 1986 M.S. in Physics, University of California, Los Angeles, USA
  • 1992 Ph.D. in Physics, Department of Physics, Boston University, USA
Experience:
  • 2015/3-2019/4 Secretary General, National Synchrotron Radiation Research Center, Taiwan.
  • 2012-present  Adjunct Professor, Graduate Program for Advanced Light Source, National Tsing-Hua University, Taiwan
  • 2012-present  Adjunct Professor, International PhD Program for Science, National Sun Yat-Sen University, Taiwan.
  • 2010-present  Adjunct Professor, Department of Photonics, National Chiao-Tung University, Taiwan.
  • 2010-2011 Head, Scientific Research Division, National Synchrotron Radiation Research Center, Taiwan.
  • 2009-present  Scientist, Division of Scientific Research, National Synchrotron Radiation Research Center, Taiwan
  • 2008-2010  Adjunct Associate Professor, Department of Photonics, National Chiao-Tung University, Taiwan.
  • 1993-2008  Associate Scientist, Division of Scientific Research, National Synchrotron Radiation Research Center, Taiwan.
  • 1992-1993 Postdoctoral Fellow, Division of Applied Science, Harvard University, USA.
Endstation:
  • In-house 6-C diffractometer
Research Interests:
  • My research interests focus on the thin film growth mechanism and structural properties of ultra-thin epitaxial films and various nano-materials. The major experimental tool is x-ray scattering. In the recent years, my group has been working on several subjects including:
    1. The crystal structure and interfacial atomic arrangement of epitaxial films of various metal oxides, especially high-k oxide for gate oxide application and ferroelectric thin films. The study provides valuable data to examine various thin film growth mechanisms and the role of interfacial chemistry.
    2. The structural and optical properties of ZnO-based epitaxial optoelectronic thin film materials with particular emphasis on the defect structures, strain state and their influence to the optical and electrical performance of these epi-films. The growth of high quality polar and non-polar ZnO epitaxial films and multi-layers on various substrates was investigated.
    3. The structure and composition characterization of various novel nano-materaials.
    Besides the subjects mentioned above, we have also involved in structural investigation of various novel thin film materials and developing new experimental techniques for structural and compositional characterization.
Selected Publications:
  • Lawrence Boyu Young, Chao-Kai Cheng, Keng-Yung Lin, Yen-Hsun Lin, Hsien-Wen Wan, Ren-Fong Cai, Shen-Chuan Lo, Mei-Yi Li, Chia-Hung Hsu*, Jueinai Kwo*, and Minghwei Hong*, "Epitaxy of high-quality single-crystal hexagonal perovskite YAlO3 on GaAs(111)A using laminated atomic layer deposition", Cryst. Growth & Design 19, 2030 (2019).
  • C. K. Cheng, L. B. Young, K. Y. Lin, Y. H. Lin, H. W. Wan, G. J. Lu, M. T. Chang, R. F. Cai, S. C. Lo, M. Y. Li, C. H. Hsu*, J. Kwo*, and M. Hong*, "Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A and (001) using atomic layer deposition", Microelectronic Engineering 178, 125 (2017).
  • Y. H. Lin, C. K. Cheng, K. H. Chen, C. H. Fu, T.W. Chang, C. H. Hsu*, J. Kwo*, and M. Hong*, "Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition", Materials 8, 7084 (2015).
  • Y. C. Liu, Y. W. Chen, S. C. Tseng, M. T. Chang, S. C. Lo, Y. H. Lin, C. K. Cheng, H. Y. Hung, C. H. Hsu*, J. Kwo*, and M. Hong*, "Epitaxial ferromagnetic Fe3Si on GaAs(111)A with atomically smooth surface and interface", Appl. Phys. Lett. 107, 122402 (2015).
  • Wei-Rein Liu*, Bi-Hsuan Lin, Chi-Yuan Lin, Song Yang, Chin-Chia Kuo, Forest Shih-Sen Chien, Chen-Shiung Chang, Chia-Hung Hsu*, Wen-Feng Hsieh, "The effect of thermal annealing on the optical and electrical properties of ZnO epitaxial films grown on n-GaAs(001)", RSC Advances 5, 12358 (2015).
  • Wen Hsin Chang, Shao Yun Wu, Chih Hsun Lee, Te Yang Lai, Y. J. Lee, Pen Chang, Chia-Hung Hsu*, Tsang Shiou Huang, J. Kwo, and Minghwei Hong*, "Phase transformation of molecular beam epitaxy-grown nm thick Gd2O3 and Y2O3 on GaN", ACS Appl. Mater. Inter. 5, 1436 (2013).
  • B. H. Lin, W.-R. Liu, C. Y. Lin, S. T. Hsu, S. Yang, C. C. Kuo, C.-H. Hsu*, W. F. Hsieh*, F. S.-S. Chien, C. S. Chang, "Single domain m-plane ZnO grown on m-plane sapphire by radio-frequency magnetron sputtering", ACS Appl. Mater. Inter. 4, 5333 (2012). (2011 IF = 4.525)
  • W.-R. Liu, B. H. Lin, S. Yang, C. C. Kuo, Y.-H. Li, C.-H. Hsu,* W. F. Hsieh,* W. C. Lee, M. Hong, and J. Kwo, ”The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a -Al2O3 buffer layer”, CrystEngComm 14, 1665 (2012).( 2011 IF =3.842)
  • B. H. Lin, W.-R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu*, W. F. Hsieh*, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, "The growth of epitaxial ZnO film on Si(111) with Gd2O3(Ga2O3) buffer layer", Cryst. Growth & Design 11, 2846 (2011). (2010 IF = 4.389)
  • S. Yang, B. H. Lin, W.-R. Liu, J.-H. Lin, C.-S. Chang, C.-H. Hsu*, and W.F. Hsieh*, "Structural characteristics and annealing effect of ZnO epitaxial films grown by atomic layer deposition", Cryst. Growth Des. 9, 5184 (2009). (2008 IF = 4.215)
  • Wen Hsin Chang, Chih Hsun Lee, Yao Chung Chang, Pen Chang, Mao Lin Huang, Yi Jun Lee, Chia-Hung Hsu*, J. Minghuang Hong, Chiung Chi Tsai, Jueinai Kwo* and Minghwei Hong*, "Nano-meter thick single crystal hexagonal Gd2O3 on GaN for advanced complementary metal-oxide-semiconductor technology", Adv. Mater. 21, 4970 (2009). (2008 IF = 8.1917)
  • C. C. Kuo, W.-R. Liu, W. F. Hsieh*, C.-H. Hsu*, H. C. Hsu, and L. C. Chen, "Crystal symmetry breaking of wurtzite to orthorhombic in nonpolar a-ZnO epi-films", Appl. Phys. Lett. 95, 11905 (2009). (2008 IF = 3.726)
  • W.-R. Liu, Y.-H. Li, W. F. Hsieh*, C.-H. Hsu*, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, "Domain matching epitaxial growth of high-quality ZnO film using a Y2O3 buffer layer on Si (111)", Cryst. Growth Des. 9, 239 (2009). (2008 IF = 4.215)
  • C. W. Nieh, Y. J. Lee, W. C. Lee, Z. K. Yang, A. R. Kortan, M. Hong*, J. Kwo, and C.-H. Hsu*, "Nano-meter thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection", Appl. Phys. Lett. 92, 61914 (2008). (2010 IF = 3.82)
  • Z. K. Yang, W. C., Lee Y. J. Lee, P. Chang, M. L. Huang, M. Hong, K. L. Yu, M.-T. Tang, B.-H. Lin, C.-H. Hsu*, and J. Kwo*, "Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)", Appl. Phys. Lett. 91, 202909 (2007). (2010 IF = 3.82)
  • C.-H. Hsu*, Mau-Tsu Tang, Hsin-Yi Lee, Chih-Mon Huang, K. S. Liang, S. D. Lin, Z. C. Lin, C. P. Lee, "Composition Determination of Semiconductor Quantum Wires by X-ray Scattering", Physica B 357, 6 (2005). (2010 IF = 1.909)