About NSRRC / Staff Directory

Materials Science Group

Name: 徐嘉鴻( Chia-Hung Hsu )
EXT.: 7118
E-mail: chsu@nsrrc.org.tw
  • 1982 B.S. in Physics, National Taiwan Normal University
  • 1986 M.S. in Physics, University of California, Los Angeles, USA
  • 1992 Ph.D. in Physics, Department of Physics, Boston University, USA
  • 2012- present Adjunct Professor, Graduate Program for Advanced Light Source, National Tsing-Hua University
  • 2010- present Adjunct Professor, Department of Photonics, National Chiao-Tung University
  • 2009-present Scientist, Division of Scientific Research, NSRRC, Taiwan.
  • 2008-2010 Adjunct Associate Professor, Department of Photonics, National Chiao-Tung University
  • 1993-2008 Associate Scientist, Division of Scientific Research, NSRRC, Taiwan.)
  • 1992-1993 Postdoctoral Fellow, Division of Applied Science, Harvard University, USA)
  • In-house 6-C diffractometer
Research Interests:
  • My research interests focus on the thin film growth mechanism and structural properties of ultra-thin epitaxial films and various nano-materials. The major experimental tools are x-ray scattering and scanning probe microscopy. In the recent years, my group has been working on several subjects including:
    The crystal structure and interfacial atomic arrangement of epitaxial films of various metal oxides, especially high-k oxide for gate oxide application. The study provides valuable data to examine various thin film growth mechanisms and the role of interfacial chemistry.
    The structural and optical properties of ZnO-based epitaxial optoelectronic thin film materials with particular emphasis on the defect structures, strain state and their influence to the optical and electrical performance of these epi-films. The growth of high quality polar and non-polar ZnO epitaxial films and multi-layers on various substrates is a focus of recent studies. Pulsed laser deposition, and RF sputtering growth are employed to fabricate the samples.
    The structure and composition characterization of various novel nano-materaials.
    Besides the subjects mentioned above, we have also involved in structural investigation of various novel thin film materials and developing new experimental techniques for structural and compositional characterization.
Selected Publications:
  • B. H. Lin, W.-R. Liu, C. Y. Lin, S. T. Hsu, S. Yang, C. C. Kuo, C.-H. Hsu*, W. F. Hsieh*, F. S.-S. Chien, C. S. Chang, "Single domain m-plane ZnO grown on m-plane sapphire by radio-frequency magnetron sputtering", ACS Appl. Mater. Inter. 4, 5333 (2012). (2011 IF = 4.525)
  • W.-R. Liu, B. H. Lin, S. Yang, C. C. Kuo, Y.-H. Li, C.-H. Hsu,* W. F. Hsieh,* W. C. Lee, M. Hong, and J. Kwo, ”The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a -Al2O3 buffer layer”, CrystEngComm 14, 1665 (2012).( 2011 IF =3.842)
  • B. H. Lin, W.-R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu*, W. F. Hsieh*, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, "The growth of epitaxial ZnO film on Si(111) with Gd2O3(Ga2O3) buffer layer", Cryst. Growth & Design 11, 2846 (2011). (2010 IF = 4.389)
  • S. Yang, B. H. Lin, W.-R. Liu, J.-H. Lin, C.-S. Chang, C.-H. Hsu*, and W.F. Hsieh*, "Structural characteristics and annealing effect of ZnO epitaxial films grown by atomic layer deposition", Cryst. Growth Des. 9, 5184 (2009). (2008 IF = 4.215)
  • Wen Hsin Chang, Chih Hsun Lee, Yao Chung Chang, Pen Chang, Mao Lin Huang, Yi Jun Lee, Chia-Hung Hsu*, J. Minghuang Hong, Chiung Chi Tsai, Jueinai Kwo* and Minghwei Hong*, "Nano-meter thick single crystal hexagonal Gd2O3 on GaN for advanced complementary metal-oxide-semiconductor technology", Adv. Mater. 21, 4970 (2009). (2008 IF = 8.1917)
  • C. C. Kuo, W.-R. Liu, W. F. Hsieh*, C.-H. Hsu*, H. C. Hsu, and L. C. Chen, "Crystal symmetry breaking of wurtzite to orthorhombic in nonpolar a-ZnO epi-films", Appl. Phys. Lett. 95, 11905 (2009). (2008 IF = 3.726)
  • W.-R. Liu, Y.-H. Li, W. F. Hsieh*, C.-H. Hsu*, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, "Domain matching epitaxial growth of high-quality ZnO film using a Y2O3 buffer layer on Si (111)", Cryst. Growth Des. 9, 239 (2009). (2008 IF = 4.215)
  • C. W. Nieh, Y. J. Lee, W. C. Lee, Z. K. Yang, A. R. Kortan, M. Hong*, J. Kwo, and C.-H. Hsu*, "Nano-meter thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection", Appl. Phys. Lett. 92, 61914 (2008). (2010 IF = 3.82)
  • Z. K. Yang, W. C., Lee Y. J. Lee, P. Chang, M. L. Huang, M. Hong, K. L. Yu, M.-T. Tang, B.-H. Lin, C.-H. Hsu*, and J. Kwo*, "Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)", Appl. Phys. Lett. 91, 202909 (2007). (2010 IF = 3.82)
  • C.-H. Hsu*, Mau-Tsu Tang, Hsin-Yi Lee, Chih-Mon Huang, K. S. Liang, S. D. Lin, Z. C. Lin, C. P. Lee, "Composition Determination of Semiconductor Quantum Wires by X-ray Scattering", Physica B 357, 6 (2005). (2010 IF = 1.909)