中心簡介 / 同仁通訊錄

凝態物理小組


姓名: 劉若亞( Ro-Ya Liu )
分機: 7258
電子郵件: liu.roya@nsrrc.org.tw
學歷:
  • 日本東京大學物理博士(2017)
  • 國立清華大學先進光源學程物理組碩士(2013)
  • 國立清華大學物理系學士(2011)
經歷:
  • 國家同步輻射研究中心助研究員 (2020.06~ 至今)
  • 美國勞倫斯柏克萊國家實驗室先進光源合聘博士後研究員 (2018.02~ 2020.03)
  • 美國伊利諾州立大學香檳分校合聘博士後研究員(2018.02~2020.03)
  • 中研院物理所博士後研究員(2017.10~2019.12)
  • 國立清華大學物理系研究助理(2013.09~2014.06)
負責實驗站:
  • TPS BL39A2 NanoARPES
研究領域:
代表作:
  • M.-K. Lin, R. A. B. Villaos, J. A. Hlevyack, P. Chen, R.-Y. Liu, C.-H. Hsu, J. Avila, S.-K. Mo, F.-C. Chuang, and T.-C. Chiang, “Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films”, Phys. Rev. Lett. 124, 036402 (2019).
  • R.-Y. Liu, M.-K. Lin, P. Chen, T. Suzuki, P. C. J. Clark, N. K. Lewis, C. Cacho, E. Springate, C.-S. Chang, K. Okazaki, W. Flavell, I. Matsuda, T.-C. Chiang, “Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide”, Phys. Rev. B, 100, 214309 (2019).
  • P. Chen, Y.-T. Chen, R.-Y. Liu, H.-D. Chen, Dengsung Lin, A. V. Fedorov, and T.-C. Chiang, “Atomic-Scale Chemical Conversion of Single-Layer Transition Metal Dichalcogenides”, ACS Nano, 13, pp5611-5615 (2019)
  • M.-K. Lin, J.A. Hlevyack, P. Chen, R.-Y. Liu, T.-C. Chiang, “Comment on "Chiral Phase Transition in Charge Ordered 1T-TiSe2"”, Phys. Rev. Lett. 122, 229701 (2019).
  • S. Yamamoto, K. Takeuchi, Y. Hamamoto, R.‐Y. Liu, Y. Shiozawa, T. Koitaya, T. Someya, K. Tashima, H. Fukidome, K. Mukai, S. Yoshimoto, M. Suemitsu, Y. Morikawa, J. Yoshinobu and I. Matsuda, “Enhancement of CO2 adsorption on oxygen‐functionalized epitaxial graphene surface at near‐ambient conditions”, Physical Chemistry Chemical Physics, 20, 19532−19538 (2018).
  • R.-Y. Liu, K. Ozawa, N. Terashima, Y. Natsui, B. Feng, S. Ito, W.-C. Chen, C.-M. Cheng, S. Yamamoto, H. Kato, T.-C. Chiang, I. Matsuda, “Controlling the surface photovoltage on WSe2 by surface chemical modification”, Appl. Phys. Lett., 112, 211603 (2018)
  • K. Ozawa, S. Yamamoto, R. Yukawa, R.-Y. Liu, N. Terashima, Y. Natsui, H. Kato, K. Mase, and I. Matsuda, “Correlation between Photocatalytic Activity and Carrier Lifetime: Acetic Acid on Single-Crystal Surfaces of Anatase and Rutile TiO2”, J. Phys. Chem. C 122, 9562−9569 (2018).
  • C.-C. Lee, B. Feng, M. D’angelo, R. Yukawa, R.-Y. Liu, T. Kondo, H. Kumigashira, I. Matsuda, and T. Ozaki, “Peculiar bonding associated with atomic doping and hidden honeycombs in borophene”, Phys. Rev. B 97, 075430 (2018).
  • R.-Y. Liu, Y. Ogawa, P. Chen, K. Ozawa, T. Suzuki, M. Okada, T. Someya, Y. Ishida, K. Okazaki, S. Shin, T.-C. Chiang and I. Matsuda, “Femtosecond to picosecond transient effects in WSe2 observed by pump-probe angle-resolved photoemission spectroscopy”, Scientific Reports, 7, 15891 (2017).
  • C.-L. Lin, R. Arafune, R.-Y. Liu, M. Yoshimura, B. Feng, K. Kawahara, Z. Ni, E. Minamitani, S. Watanabe, Y. Shi, M. Kawai, T.-C. Chiang, I. Matsuda, and N. Takagi, “Visualizing Type-II Weyl Points in Tungsten Ditelluride by Quasiparticle Interference”, ACS Nano., 11, pp11459–11465 (2017).
  • B. Feng, O. Sugino, R.-Y. Liu, J. Zhang, R. Yukawa, M. Kawamura, T. Iimori, H. Kim, Y. Hasegawa, H. Li, L. Chen, K. Wu, H. Kumigashira, F. Komori, T.-C. Chiang, S. Meng, and I. Matsuda, “Dirac fermions in borophene”, Phys. Rev. Lett. 118, 096401(2017).
  • K. Ozawa, S. Yamamoto, R. Yukawa, R.-Y. Liu, M. Emori, K. Inoue, T. Higuchi, H. Sakama, K. Mase, I. Matsuda, “What Determines the Lifetime of Photoexcited Carriers on TiO2 Surfaces?”, J. Phys. Chem. C, 120, pp 29283–2928 (2016).
  • S. Ito, B. Feng, M. Arita, A. Takayama, R.-Y. Liu, T. Someya, W.-C. Chen, T. Iimori, H. Namatame, M. Taniguchi, C.-M. Cheng, S.-J. Tang, F. Komori, K. Kobayashi, T.-C. Chiang, and I. Matsuda, “Proving Nontrivial Topology of Pure Bismuth by Quantum Confinement”, Phys. Rev. Lett. 117, 236402 (2016).
  • Y. Kubota, K. Murata, J. Miyawaki, K. Ozawa, M. C. Onbasli, T. Shirasawa, B. Feng, Sh. Yamamoto, R.-Y. Liu, S. Yamamoto, S. K. Mahatha, P. Sheverdyaeva, P. Moras, C. A. Ross, S. Suga, Y. Harada, K. L. Wang, I. Matsuda, “Interface electronic structure at the topological insulator–ferrimagnetic insulator junction”, J. Phys. Condens. Matter, 29, 055002 (2016).
  • B. Feng, Y.-H. Chan, Y. Feng, R.-Y. Liu, M.-Y. Chou, K. Kuroda, K. Yaji, A. Harasawa, P. Moras, A. Barinov, W. Malaeb, C. Bareille, T. Kondo, S. Shin, F. Komori, T.-C. Chiang, Y. Shi, I. Matsuda, “Spin texture in type-II Weyl semimetal WTe2”, Phys. Rev. B 94, 195134 (2016).
  • B. Feng, J. Zhang, R.-Y. Liu, T. Iimori, C. Lian, H. Li, L. Chen, K. Wu, S. Meng, F. Komori, and I. Matsuda, “Direct evidence of metallic bands in a monolayer boron sheet”, Phys. Rev. B 94, 041408(R) (2016).
  • K. Akikubo, I. Matsuda, D. Schmaus, G. Marcaud, R.-Y. Liu, M. G. Silly, F. Sirotti, M. D'Angelo, “Observation of an e g-derived metallic band at the Cs/SrTiO3 interface by polarization-dependent photoemission spectroscopy”, Thin Solid Films, 603, 149-153 (2016).
  • T. Koitaya, S. Yamamoto, Y. Shiozawa, K. Takeuchi, R.-Y. Liu, K. Mukai, S. Yoshimoto, K. Akikubo, I. Matsuda, J. Yoshinobu, “Real-Time Observation of Reaction Processes of CO2 on Cu (997) by Ambient-Pressure X-ray Photoelectron Spectroscopy”, Topics in Catalysis, 59, 526-531 (2016).
  • R. Yukawa, K. Ozawa, S. Yamamoto, R.-Y. Liu, I. Matsuda, “Anisotropic effective mass approximation model to calculate multiple subband structures at wide-gap semiconductor surfaces: Application to accumulation layers of SrTiO3 and ZnO”, Surface Science 641, 224-230 (2015).
  • R.-Y. Liu, A. Huang, C.-C. Huang, C.-Y. Lee, C.-H. Lin, C.-M. Cheng, K.-D. Tsuei, H.-T. Jeng, I. Matsuda, and S.-J. Tang, “Deeper insight into phase relations in ultrathin Pb films”, Phys. Rev. B 92, 115415 (2015).
  • M. Ogawa, R.-Y. Liu, C.-H. Lin, S Yamamoto, R. Yukawa, R. Hobara, S.-J. Tang, I. Matsuda, “Non-linear kinetic model for oscillatory relaxation of the photovoltage effect on a Si (111) 7× 7 surface”, Surf. Sci. 624, 70-75 (2014).
  • C.-H. Lin, T.-R. Chang, R.-Y. Liu, C.-M. Cheng, K.-D. Tsuei, H.-T. Jeng, C.-Y. Mou, I. Matsuda and S.-J. Tang, “Rashba effect within the space–charge layer of a semiconductor”, New Journal of Physics, 16, 045003 (2014).