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Hard X-ray Nanoprobe and Time-resolved XEOL to Observe Increasing Luminescence of ZnO and GaN Epitaxial Structures
B.-H. Lin*, Y.-H. Wu, T.-S. Wu, Y.-C. Wu, X.-Y. Li, W.-R. Liu*, M.-T. Tang, and W.-F. Hsieh
Hard X-ray excited optical luminescence (XEOL) with a nanofocused beam provides both excellent spatial resolution and high enough peak power density, which makes XEOL mapping and luminescence dynamics study achievable. We present here the time and X-ray intensity dependence of the near-band-edge (NBE) luminescence from the nonpolar a-plane MgZnO/ZnO multiple quantum wells (MQWs): the emission intensity increases more than 10 times after high X-ray irradiation. Different from the well-known NBE emission lifetime of ZnO (less than 1 ns), the long decay time gradually decreases from 130 ns to 35 ns with the increasing X-ray irradiation time. We attribute the observed changes in NBE luminescence to the excitation of the Mg-related energy state by the high energy X-ray nanobeam. This suggestion was further confirmed in the XEOL spectra of the Mg-doped and Si-doped c-plane GaN epi-films.
The National Synchrotron Radiation Research Center (NSRRC) and the Ministry of Science and Technology of Taiwan (Nos. MOST 108-2112-M-213-006 and MOST 108-2112-M-213-013) provided support for this project.