Electroluminescence from h-BN by Using Al2O3/h-BN Multiple Heterostructure
S. H. Lee, H. Jeong, D. Y. Kim, S.-Y. Seo, C. Han, O. F. N. Okello, J.-I. Lo, Y.-C. Peng, C.-H. Oh, G. W. Lee, J.-I. Shim, B.-M. Cheng, K. Song, S.-Y. Choi, M.-H. Jo, and J. K. Kim*
2019/08/01
Two-dimensional (2-D) hexagonal boron nitride (h-BN) has attracted considerable attention for deep ultraviolet optoelectronics and visible single photon sources, however, realization of an electrically-driven light emitter remains challenging due to its wide bandgap nature. Here, we report electrically-driven visible light emission with a red-shift under increasing electric field from a few layer h-BN by employing a five-period Al2O3/h-BN multiple heterostructure and a graphene top electrode. Investigation of electrical properties reveals that the Al2O3 layers act as potential barriers confining injected carriers within the h-BN wells, while suppressing the electrostatic breakdown by trap-assisted tunneling, to increase the probability of radiative recombination. The result highlights a promising potential of such multiple heterostructure as a practical and efficient platform for electrically-driven light emitters based on wide bandgap two-dimensional materials.
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