Peculiar Near-band-edge Emission of Polarization-dependent XEOL from a Non-polar a-plane ZnO Wafer
B.-H. Lin*, Y.-C. Wu, H.-Y. Chen, S.-C. Tseng, J.-X. Wu, X.-Y. Li, B.-Y. Chen, C.-Y. Lee, G.-C. Yin, S.-H. Chang, M.-T. Tang, and W.-F. Hsieh
2018/03/01
Polarization-dependent hard X-ray excited optical luminescence (XEOL) was used to study not only the optical properties but also the crystallographic orientations of a non-polar a-plane ZnO wafer. In addition to a positive-edge jump and extra oscillations in the near-band-edge (NBE) XEOL yield, we observed a blue shift of the NBE emission peak that follows the polarization-dependent X-ray absorption near-edge structure (XANES) as the X-ray energy is tuned across the Zn K-edge. This NBE blue shift is caused by the larger X-ray absorption, generating higher free carriers to reduce the exciton-LO phonon coupling, which causes a decrease in the exciton activation energy. The extra oscillations in XANES and XEOL as the polarization is set parallel to the c-axis is attributed to simultaneous excitations of the Zn 4p - O 2p 𝜋 -bond along the c-axis and the bilayer 𝜎-bond, whereas only the 𝜎-bond is excited when the polarization is perpendicular to the c-axis. The polarization-dependent XEOL spectra can be used to determine the crystallographic orientations.
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