中心簡介 / 同仁通訊錄

材料科學小組


姓名: 劉維仁( Wei-Rein Liu )
分機: 7130
電子郵件: liu.weirein@nsrrc.org.tw
學歷:
  • 國立交通大學光電工程研究所 博士 (2009)
  • 國立交通大學光電工程研究所 碩士 (2003)
  • 國立成功大學材料科學與工程學系 學士 (2001)
經歷:
  • 同步輻射研究中心助研究員 (2012~)
  • 國家同步輻射中心博士後研究(2011~2012)
  • 國立成功大學光電所博士後研究(2010~2011)
  • 國家同步輻射中心博士後研究(2009~2010)
研究領域:
  • X光繞射技術應用磊晶薄膜之晶體缺陷結構與成長機制
  • 應用掃描探針顯微鏡於缺陷結構與物理特性研究
  • 光電半導體物理及光學特性
代表作:
  • W.-R. Liu, W.F. Hsieh, C.-H. Hsu, K.S. Liang, and F.S.-S. Chien, “Influence of the threading dislocations on the electrical properties in epitaxial ZnO thin films” J. Cryst. Growth 297, 294 (2006).
  • W.-R. Liu, W. F. Hsieh, C.-H. Hsu,b, Keng S. Liang and F. S.-S. Chien, “Threading dislocations in domain-matching epitaxial films of ZnO,” J. Appl. Cryst. 40 924 (2007).
  • W.-R. Liu, Y.-H. Li, W. F. Hsieh, C.-H. Hsu, W. C. Lee, M. Hong and J. Kwo, “Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si (111) using a -Al2O3 buffer layer,” J. Phys. D: Appl. Phys. 41, 065105 (2008).
  • W.-R. Liu, Y.-H. Li, W. F. Hsieh, C.-H. Hsu, W. C. Lee, Y. J. Lee, M. Hong and J. Kwo, “Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y2O3 Buffer Layer on Si (111),” Crystal Growth & Design 9, 239 (2009).  
  • Jun-Rong ChenTien-Chang LuYung-Chi WuShiang-Chi LinWei-Rein LiuWen-Feng HsiehChien-Cheng Kuo, and Cheng-Chung Lee, “Large vacuum Rabi splitting in ZnO-based hybrid microcavities observed at room temperature,” Appl. Phys. Let. 94, 061103 (2009).
  • C. C. Kuo, W.-R. Liu, W. F. Hsieh, C.-H. Hsu, H. C. Hsu, and L. C. Chen, “Crystal symmetry breaking of wurtzite to orthorhombic in nonpolar a-ZnO epifilms,” Appl. Phys. Let. 95, 011905 (2009).
  • Yow-Jon LinChia-Lung TsaiW.-R. LiuW. F. HsiehC.-H. HsuHou-Yen TsaoJian-An Chu, and Hsing-Cheng Chang, “Effects of ultraviolet treatment on the contact resistivity and electronic transport at the Ti/ZnO interfaces,” J. Appl. Phys. 106, 013701 (2009).
  • S. Yang, B. H. Lin, W.-R. Liu, J.-H. Lin, C.-S. Chang, C.-H. Hsu, and W.F. Hsieh, “Structural characteristics and annealing effect of ZnO epitaxial films grown by atomic layer deposition,” Crystal Growth & Design 9, 5184 (2009).
  • C. Y. Lin, W.-R. Liu,* C. S. Chang, C.-H. Hsu, W. F. Hsieh,* and F. S.-S. Chien*, “ Effect of threading dislocations on local contacts in epitaxial ZnO films,” Journal of The Electrochemical Society 157, H268 (2010).
  • Chieh-Feng Chang, Hsing-Chao Chen, Miin-Jang Chen, W.-R. Liu, Wen-Feng Hsieh, Chia-Hung Hsu, Chao-Yu Chen, Fu-Hsiung Chang, Che-Hang Yu, and Chi-Kuang Sun, “Direct backward third-harmonic generation in nanostructures” Opt. Express 18, 7397 (2010).
  • Po-Chi Ou, Ja-Hon Lin, Chi-An Chang, W.-R. Liu and Wen-Feng Hsieh, “Thickness effect on ultrafast thermalization of carriers in above-band-gap states in ZnO epitaxial films” J. Phys. D: Appl. Phys. 43, 495103-1 -495103-5 (2010).
  • Y.H. Chen, Y. C. Wen, W.-R. Liu, W. F. Hsieh, C. K. Sun, “ Acoustic velocity and optical index birefringence in A-plane ZnO thin films” Chin. J. Phys. 49, 201-205 (2011).
  • Po-Chi Ou, W.-R. Liu, Ho-Jei Ton, Ja-Hon Lin, and Wen-Feng Hsieh, “Ultrafast relaxation and absorption saturation at near exciton resonance in a thin ZnO epilayer” J. Appl. Phys. 109, 013102-1- 013102-5 (2011).
  • Bi-Hsuan Lin, W.-R. Liu, Song Yang, Chin-Chia Kuo, Chia-Hung Hsu, Wen-Feng Hsieh, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, “The growth of epitaxial ZnO film on Si(111) with Gd2O3(Ga2O3) buffer layer” Crystal Growth & Design 11, 2846-2851 (2011).
  • W.-R. Liu, B.-H. Lin, C.C. Kuo, Y.-H. Li, W. F. Hsieh, C.-H. Hsu, W. C. Lee, M. Hong, and J. Kwo, “The influence of dislocation on optical and electrical properties for epitaxial ZnO on Si (111) using a g-Al2O3 buffer layer,” CrystEngComm, 14, 1665 (2012).
  • S. Yang, C. C. Kuo, W.-R. Liu, B. H. Lin, H.-C. Hsu, C.-H. Hsu, and W. F. Hsieh, “Photoluminescence associated with basal stacking faults in c-plane ZnO epitaxial film grown by atomic layer deposition” Appl. Phys. Let. 100, 101907 (2012).
  • C.C. Kuo, B.H. Lin, Song Yang, W. R. Liu, W.F. Hsieh, and C.-H. Hsu, “Surface-bound-exciton emission associated with domain interfaces in m-plane ZnO films” Appl. Phys. Let. 101, 011901 (2012).
  • S. Yang, B. H. Lin, C. C. Kuo, H. C. Hsu, W.-R. Liu, M. O. Eriksson, P.-O. Holtz, C.-S.Chang, C.-H. Hsu, and W. F. Hsieh, “Improvement of crystalline and photoluminescence of atomic layer deposited m-plane ZnO epitaxial films by annealing treatment” Crystal Growth & Design, 12, 4745 (2012).
  • B. H. Lin, W.-R. Liu, C. Y. Lin, S. T. Hsu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, F. S.-S. Chien, C. S. Chang, “Single domain m-plane ZnO grown on m-plane sapphire by radio-frequency magnetron sputtering”, ACS Applied Materials & Interfaces.4, 5333 (2012).
  • W. R. Liu, B. H. Lin, C. C. Kuo, W. C. Lee, M. Hong, J. Kwo, C.-H. Hsu, and W. F. Hsieh, “Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111)”, CrystEngComm., in press (2012).
  • C. C. Kuo, W.-R. Liu, B. H. Lin, W. F. Hsieh, C.-H. Hsu, W. C. Lee, M. Hong, and J. Kwo, “Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y2O3-buffered Si (111)” Optics Express, 21 1857-1864 (2013).