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Electrostatic Force-driven Oxide Heteroepitaxy for Interface Control
Z. Ren, M. Wu, X. Chen, W. Li, M. Li, F. Wang, H. Tian*, J. Chen, Y. Xie, J. Mai, X. Li, X. Lu, Y. Lu, H. Zhang, G. V. Tendeloo, Z. Zhang, and G. Han*
Oxide heterostructure interfaces create a platform to induce intriguing electric and magnetic functionalities for possible future devices. A general approach to control growth and interface structure of oxide heterostructures will offer a great opportunity for understanding and manipulating the functionalities. Here, it is reported that an electrostatic force, originating from a polar ferroelectric surface, can be used to drive oxide heteroepitaxy, giving rise to an atomically sharp and coherent interface by using a low‐temperature solution method. These heterostructures adopt a fascinating selective growth, and show a saturation thickness and the reconstructed interface with concentrated charges accumulation. The ferroelectric polarization screening, developing from a solid–liquid interface to the heterostructure interface, is decisive for the specific growth. At the interface, a charge transfer and accumulation take place for electrical compensation. The facile approach presented here can be extremely useful for controlling oxide heteroepitaxy and producing intriguing interface functionality via electrostatic engineering.